Semiconductor device with a gate having a bulbous area and a flattened area underneath the bulbous area and method for manufacturing the same

ABSTRACT

A semiconductor device with a gate having a bulbous area and a flattened area underneath the bulbous are is presented. The semiconductor device includes a semiconductor substrate, an isolation layer, a gate insulation layer, and gates. The semiconductor substrate has recess parts that have first grooves which have bulbous-shaped profiles and second vertically flattened profile grooves which extend downward from the first grooves. The gates are formed in the recess parts in which the gate insulation layer is double layered in the bulbous profile areas and is single layered in the flattened profile areas.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application claims priority to Korean patent applicationnumber 10-2009-0015115 filed on Feb. 24, 2009, which is incorporatedherein by reference in its entirety.

BACKGROUND OF THE INVENTION

The present invention relates to a semiconductor device and a method formanufacturing the same, and more particularly, to a semiconductor devicethat can realize a reduction in GIDL (gate-induced drain leakage) and amethod for manufacturing the same.

As high integration of a semiconductor device proceeds, it is becomingmore and more difficult to achieve a desired threshold voltage usingconventional planar channel structures. Thus, limitations arise andalternate solutions must be present that can overcome these problemsbrought about by the high integration. Under these circumstances,research has actively been conducted in order to develop semiconductordevices which have three-dimensional channel structures capable ofsecuring an effective channel length while maintaining a highintegration. As a result of this research and development, semiconductordevices having recess channels or protrusion channels have already beendisclosed in the art. Further, semiconductor devices having saddlefin-shaped channels, in which the recess channel and the protrusionchannel are combined, have also been disclosed in the art.

In semiconductor devices having saddle fin-shaped channels, whencompared to those semiconductor devices that have the more conventionalplanar channel structure, an effective channel length can be achieved.Since an effective channel width is increased in fin-shaped channels,then current drivability can also be improved.

The semiconductor device having the saddle fin-shaped channel isstructured such that a gate forming area in an active region is recessedto a first depth and portions of an isolation layer which extend fromthe gate forming area are recessed underneath the gate to a second depthgreater than the first depth to expose the front and rear surfaces ofthe gate forming area recessed to the first depth.

Unfortunately, semiconductor devices having the saddle fin-shapedchannel can suffer a threshold voltage problem. Since a gate isstructured to cover a channel area, then the threshold voltage (Vt) dropoccurs as compared to a semiconductor device which has a recess channelcapable of securing reliability in terms of characteristics thereof. Inorder to cope with this problem, the concentration of boron in thechannel is often increased. However, if this is the case, then electricfields in junction areas are intensified, and the junction leakageincreases. As a result the refresh characteristics are likely todegrade.

In addition, more conventional semiconductor devices that have thesaddle fin-shaped channel configuration are made by using radical gateoxidation fabrication schemes in which the growth of an oxide layer isuniformly implemented irrespective of the directions of silicon latticesfor the purpose of reducing off-leakage toward a channel area. In thiscase, GIDL current increases at the overlapping areas between junctionareas and gates. Meanwhile, in the case where the existing dry oxidationscheme is employed instead of the radical gate oxidation scheme,degradations in terms of sub-threshold slope and DIBL (drain-inducedbarrier lowering) arise, whereby off-leakage increases and refreshcharacteristics are also likely to deteriorate.

As a result, in the conventional semiconductor device having the saddlefin-shaped channel, a retention time is shortened when compared to thesemiconductor device having a recess channel.

SUMMARY OF THE INVENTION

Embodiments of the present invention are directed to a semiconductordevice that can prevent or at least minimize the degradation of refreshcharacteristics from occurring and a method for manufacturing the same.

Also, embodiments of the present invention are directed to asemiconductor device that can reduce GIDL (gate-induced drain leakage)and a method for manufacturing the same.

Further, embodiments of the present invention are directed to asemiconductor device that exhibit lengthen retention times and a methodfor manufacturing the same.

In one aspect of the present invention, a semiconductor device comprisesa semiconductor substrate having recess parts defined in gate formingareas thereof, the recess parts including first grooves which have abulbous-shaped profile and second grooves which extend downward from thefirst grooves; an isolation layer formed in the semiconductor substratethat exposes front and rear surfaces of the gate forming areas in whichthe recess parts are defined; a gate insulation layer formed on surfacesof the recess parts and on the exposed front and rear surfaces of thegate forming areas and having a thickness that is greater in the firstgrooves of the recess parts than the other portions of the recess parts;and gates formed in the recess parts in which the gate insulation layeris formed and on the exposed front and rear surfaces of the gate formingareas.

The isolation layer has a structure in which portions of the isolationlayer extending from the gate forming areas are recessed in a mannersuch that the recessed gate forming areas can project out of theisolation layer.

The gate insulation layer is formed within the first grooves in therecess parts and has a double-layered structure.

The double-layered structure of the gate insulation layer includes afirst insulation layer which is formed on the surfaces of the firstgrooves and a second insulation layer which is formed on the firstinsulation layer.

The gate insulation layer formed within the second grooves in the recessparts has a single-layered structure.

The gates can have a stack-like structure of a first conductive layerformed on the gate insulation layer, a second conductive layer formed onthe first conductive layer, and a hard mask layer formed on the secondconductive layer.

The first conductive layer may comprise any conductive type of materialsuch as a polysilicon layer.

The second conductive layer may comprise any type of conductive materialsuch as a metal-based layer.

The hard mask layer may comprise any type of hard mask material such asa nitride layer.

The semiconductor device may further comprise gate spacers formed onboth sidewalls of the gates.

The semiconductor device further comprises junction areas formed withina surface of the active region along both sides of the gates.

In another aspect of the present invention, a method for manufacturing asemiconductor device comprises the steps of forming an isolation layerin a semiconductor substrate to define an active region; defining firstgrooves which have a bulbous-shaped profile in the active region;forming a first insulation layer on surfaces of the first grooves;defining recess parts by etching lower portions of the first insulationlayer in the first grooves into the active region below the firstgrooves to thereby define second grooves; etching the isolation layer toexpose front and rear surfaces of the gate forming areas in which therecess parts are defined; forming a second insulation layer within therecess parts including the first insulation layer, and thereby forming agate insulation layer including the first insulation layer and thesecond insulation layer; and forming gates in the recess parts in whichthe gate insulation layer is formed and on the exposed front and rearsurfaces of the gates.

The step of defining the first grooves having the bulbous-shaped profilecomprises the steps of forming a recess mask on the semiconductorsubstrate which is formed with the isolation layer, to expose gateforming areas of the active region; and isotropically etching the gateforming areas of the active region which are exposed through the recessmask.

The recess mask is formed of an oxide layer and a nitride layer.

The first insulation layer may be formed by using a radical oxidationprocess.

The second insulation layer may be formed by using a radical oxidationprocess.

The gates can have a stack-like structure of a first conductive layerformed on the gate insulation layer formed in the recess parts, a secondconductive layer formed on the first conductive layer, and a hard masklayer formed on the second conductive layer.

The first conductive layer may comprise a polysilicon layer.

The second conductive layer may comprise a metal-based layer.

The hard mask layer may comprise a nitride layer.

After the step of forming the gates, the method may further comprise thestep of forming gate spacers on both sidewalls of the gates.

After the step of forming the gates, the method may further comprisesthe step of forming junction areas in a surface of the active region onboth sides of the gates.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view illustrating a semiconductor device in accordancewith an embodiment of the present invention.

FIGS. 2A and 2B are sectional views taken along the lines X-X′ and Y-Y′,respectively, of FIG. 1.

FIGS. 3A through 3F are sectional views taken in correspondence to theline X-X′ of FIG. 1, illustrating the processes of a method formanufacturing a semiconductor device in accordance with anotherembodiment of the present invention.

FIGS. 4A through 4F are sectional views taken in correspondence to theline Y-Y′ of FIG. 1, illustrating the processes of the method formanufacturing a semiconductor device in accordance with anotherembodiment of the present invention.

DESCRIPTION OF SPECIFIC EMBODIMENTS

Hereafter, specific embodiments of the present invention will bedescribed in detail with reference to the accompanying drawings.

FIG. 1 is a plan view illustrating a semiconductor device in accordancewith an embodiment of the present invention, and FIGS. 2A and 2B aresectional views taken along the lines X-X′ and Y-Y′, respectively, ofFIG. 1.

Referring to these drawings, an isolation layer 104 is formed in asemiconductor substrate 100 to delimit an active region 102. Firstrecess parts R1 are defined in the gate forming areas of the activeregion 102 to a first depth. Second recess parts R2 are defined inportions of the isolation layer 104, which extend from the gate formingareas, to a second depth greater than the first depth to expose thefront and rear surfaces of the gate forming areas recessed to the firstdepth, that is, to obtain a saddle fin-shaped channel. Each first recesspart R1 is composed of a first groove H1 which is defined in the surfaceof the semiconductor substrate 100 and has a bulbous-shaped profile anda second groove H2 which extends downward from the first groove H1 andhas a vertical profile.

Gates 130 are formed in the gate forming areas of the active region 102in which the first recess parts R1 are defined and in the portions ofthe isolation layer 104 which extend from the gate forming areas and inwhich the second recess parts R2 are defined. Gate spacers 128 areformed on both sidewalls of the gates 130, and junction areas 132 areformed in the active region 102 on both sides of the gates 130 includingthe gate spacers 128.

Each gate 130 can have a stack-like structure of a gate insulation layer120, a first gate conductive layer 122 formed of polysilicon material, asecond gate conductive layer 124 formed of a metallic material such astungsten, and a hard mask layer 126 comprising a nitride layer. Oneembodiment is that the gates 130 may be formed in lines that extendacross the action region 102 and onto the isolation layer 104. Each gate130 is formed in the shape of a saddle fin gate 130.

The gate insulation layer 120 includes a first insulation layer 112formed within the first groove H1 which has a bulbous-shaped profile.The gate insulation layer 120 also includes a second insulation layer114 formed within the first groove H1 and within the second groove H2.As a result, a portion of the gate insulation layer 120 has adouble-layered structure formed in the first groove H1 that includes thefirst insulation layer 112 and the second insulation layer 114. Howeverin the second groove H2 the gate insulation layer 120 has asingle-layered structure including only the second insulation layer 114.

In the semiconductor device according to the embodiment of the presentinvention, configured as mentioned above, due to the fact that a portionof a gate insulation layer 120, which overlaps with junction areas 132,has a double-layered structure and possesses an increased thickness whencompared to the conventional art, GIDL can be decreased.

As a consequence, in the semiconductor device according to theembodiment of the present invention, a retention time can be lengthenedthrough the decrease of GIDL. As a result, refresh characteristics ofthe resulting semiconductor device can be improved.

The semiconductor device according to the embodiment of the presentinvention exhibit many of the same operational characteristics as thoseof the conventional semiconductor devices that have saddle fin gates. Inparticular, the controllability of a saddle fin gate is determineddepending upon the thickness of a gate insulation layer which covers achannel. In the case of the semiconductor device according to theembodiment of the present invention, since a portion of the gateinsulation layer 120, which covers the bottom and the front and rearsurfaces of the gate 130 has a single-layered structure composed ofsecond insulation layer 114 having essentially the same thickness as amore conventional gate insulation layer having a single-layeredstructure. Accordingly, the same or nearly the same operationalcharacteristics as those of the conventional semiconductor device havingthe saddle fin gates are expected to be exhibited.

Hereinbelow, a method for manufacturing a semiconductor device inaccordance with another embodiment of the present invention will bedescribed in detail with reference to FIGS. 3A through 3F and FIGS. 4Athrough 4F. FIGS. 3A through 3F are sectional views taken incorrespondence to the line X-X′ of FIG. 1, illustrating the processes ofthe method, and FIGS. 4A through 4F are sectional views taken incorrespondence to the line Y-Y′ of FIG. 1, illustrating the processes ofthe method.

Referring to FIGS. 3A and 4A, an isolation layer 104 is formed in asemiconductor substrate 100 is made to define an active region 102. Theisolation layer 104 may be formed by filling an oxide layer in trenches,for example, through an STI (shallow trench isolation) process. An oxidelayer 106 and a nitride layer 108 are sequentially formed on thesemiconductor substrate 100 including the isolation layer 104 as thematerials that comprises the recess mask.

Referring to FIGS. 3B and 4B, by selectively etching the nitride layer108 and the oxide layer 106, a recess mask 110 is formed which exposesportions of the active region 102 for eventually building the gates 130.By isotropically etching into these exposed areas in the active region102, first grooves H1 having a bulbous-shaped profile are defined at afirst depth. The reason why the first grooves H1 are defined by usingisotropic etching to have the bulbous-shaped profile is to eventuallyprovide an additional protection of a first insulation layer 112. Thefirst insulation layer 112 will be then formed within the first groovesH1 and may comprise an oxide layer.

Referring to FIGS. 3C and 4C, by conducting a pre-gate oxidation processfor the resultant semiconductor substrate 100 within the first groovesH1 having the bulbous-shaped profile, a first insulation layer 112comprising an oxide layer is formed within the first grooves H1.

Referring to FIGS. 3D and 4D, by conducting an etching process on theresultant semiconductor substrate 100 having the first insulation layer112, portions of the first insulation layer 112 are removed. As aresult, portions of the first insulation layer 112 which are formed onthe bottoms of the first grooves H1 are removed. Also as a result,portions of the first insulation layer 112 which are formed along thesidewalls of the first grooves H1 are not removed and subsequentlyremain within the first groove H1.

Accordingly, as a result of the an etching process into first insulationlayer 112 within the first grooves H1, second grooves H2 are formedhaving a substantially vertical profile are defined below the firstgrooves H1. Through this, first recess parts R1, which include firstgrooves H1 have a first depth, and second grooves H2 have a seconddepth. At the same time, by etching portions of the isolation layer 104which extend from the gate forming areas of the active region 102,second recess parts R2 having a second depth greater than the firstdepth of the first recess parts R1 are defined in the portions of theisolation layer 104 which extend from the gate forming areas of theactive region 102.

Referring to FIGS. 3E and 4E, the recess mask 110 composed of the stackpattern of the oxide layer 106 and the nitride layer 108 is removed.Then, by conducting a gate oxidation process on the resultantsemiconductor substrate 100, a second insulation layer 114 comprising anoxide layer is formed within the first grooves H1 and the second groovesH2. Through this, a gate insulation layer 120 including the firstinsulation layer 112 and the second insulation layer 114 is formed.

As a result, the gate insulation layer 120 has a double-layeredstructure of the first insulation layer 112 and the second insulationlayer 114 on the sidewalls of the first grooves H1, and a single-layeredstructure of the second insulation layer 114 on the surfaces of thesecond grooves H2.

Referring to FIGS. 3F and 4F, a first gate conductive layer 122comprising, for example, a polysilicon layer is formed on the gateinsulation layer 120 that fills in the first and second recess parts R1and R2. A second gate conductive layer 124 comprising, for example, ametal-based layer is then formed on the first gate conductive layer 122,and a hard mask layer 126 comprising a nitride layer is then formed onthe second gate conductive layer 124. Thereupon, by etching the hardmask layer 126, the second gate conductive layer 124, the first gateconductive layer 122 and the gate insulation layer 120, gates 130 areformed. When viewed in entirety, the gates 130 are formed in lines whichextend across the gate forming areas of the active region 102 and theportions of the isolation layer 104 extending from the gate formingareas. In the active region 102, the gates 130 are formed in the shapeof saddle fin gates which cover the bottoms and the front and rearsurfaces of the first recess parts R1.

Subsequently gate spacers 128 may be formed on both sidewalls of thegates 130. The gate spacers 128 may comprise, for example, a nitridelayer. As the case may be, the gate spacers 128 can be formed as asingle layer of an oxide layer or a stack of an oxide layer and anitride layer.

Thereafter, while not shown in a drawing, by sequentially conducting aseries of subsequent well-known processes including a landing plugforming process, the manufacture of a semiconductor device in accordancewith another embodiment of the present invention is completed.

Although specific embodiments of the present invention have beendescribed for illustrative purposes, those skilled in the art willappreciate that various modifications, additions and substitutions arepossible, without departing from the scope and the spirit of theinvention as disclosed in the accompanying claims.

1. A semiconductor device comprising: a semiconductor substrate havingrecess parts defined in gate forming areas thereof, the recess partsincluding first grooves which have a bulbous-shaped profile and secondgrooves that extend downward from the first grooves; an isolation layerformed in the semiconductor substrate in that exposes front and rearsurfaces of the gate forming areas in which the recess parts aredefined; a gate insulation layer formed on surfaces of the recess partsand on the exposed front and rear surfaces of the gate forming areas andthe gate insulation layer having a thickness which is greater in thefirst grooves of the recess parts than the other portions of the recessparts; and gates formed in the recess parts in which the gate insulationlayer is formed and on the exposed front and rear surfaces of the gateforming areas, wherein the isolation layer formed in the semiconductorsubstrate that exposes the front and rear surfaces of the gate formingareas in which the recess parts are formed to define Saddle fin shapedchannels.
 2. The semiconductor device according to claim 1, whereinportions of the isolation layer extend from the gate forming areas arerecessed in a manner such that the recessed gate forming areas canproject out of the isolation layer.
 3. The semiconductor deviceaccording to claim 1, wherein the gate insulation layer formed onsurfaces of the first grooves in the recess parts has a double-layeredstructure.
 4. The semiconductor device according to claim 3, wherein thedouble-layered structure of the gate insulation layer includes a firstinsulation layer formed on the surfaces of the first grooves and asecond insulation layer formed on the first insulation layer.
 5. Thesemiconductor device according to claim 1, wherein the gate insulationlayer formed on surfaces of the second grooves in the recess parts has asingle-layered structure.
 6. The semiconductor device according to claim1, wherein the gate comprises a first conductive layer, a secondconductive layer stacked on the first conductive layer, and a hard masklayer stacked on the second conductive layer.
 7. The semiconductordevice according to claim 6, wherein the first conductive layercomprises a polysilicon layer, and the second conductive layer comprisesa metal-based layer.
 8. The semiconductor device according to claim 6,wherein the hard mask layer comprises a nitride layer.
 9. Thesemiconductor device according to claim 1, further comprising gatespacers on the gate.
 10. The semiconductor device according to claim 1,further comprising junction areas formed in a surface of the activeregion on both sides of the gates.
 11. The semiconductor deviceaccording to claim 1, wherein the first groove has a depth correspondingto a depth of the junction region.